Dram device having capacitor
作者： Hee-Il Chae
DOI:
关键词: Optoelectronics 、 Chemical-mechanical planarization 、 Dram 、 Node (physics) 、 Layer (electronics) 、 Electrical engineering 、 Spark plug 、 Temporary storage 、 Materials science 、 Capacitor 、 Electrode
摘要: In a DRAM device having capacitor and method thereof, the included in is characterized to have lower electrode that passes through plurality of interlayer insulating layers. A first layer formed on semiconductor substrate. contact plug electrically An layer. The etched form temporary storage node hole exposing plug. exposed by portions are simultaneously hole. conformally surface substrate planarization process performed with respect remove cup-shaped Furthermore, dielectric an upper cover sequentially at least bottom inner sidewall electrode.
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