Method of manufacturing a capacitor in a semiconductor device
作者： Lee Jae Gon
DOI:
关键词: Dielectric 、 Electrode 、 Etching (microfabrication) 、 Spark plug 、 Metal-insulator-metal 、 Composite material 、 Substrate (electronics) 、 Layer (electronics) 、 Capacitor 、 Materials science
摘要: PURPOSE: A fabrication method of capacitors having an MIM(Metal Insulator Metal) structure is provided to simplify manufacturing processes by forming dielectric films different constant on a same layer. CONSTITUTION: After interlayer dielectric(2) contact plug(3) silicon substrate(1), lower electrode(4) and anti-reflective layer(5) are sequentially formed the resultant structure. first film(6), surface exposed etching film second film(7) electrode. An upper electrode(8) By patterning electrode, first/second films, layer capacitor(C1) film(6) capacitor(C2) simultaneously formed. The each other.
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