Electron mobility in high-k Ge-MISFETs goes up to higher
作者： T. Nishimura , C. H. Lee , S. K. Wang , T. Tabata , K. Kita
DOI: 10.1109/VLSIT.2010.5556230
关键词: Optoelectronics 、 Materials science 、 Gate stack 、 CMOS 、 Induced high electron mobility transistor 、 Electron mobility 、 Germanium 、 MISFET 、 Logic gate 、 High-κ dielectric 、 Electrical engineering
摘要: This paper will first discuss intrinsic advantages of high-pressure oxidation Ge and then present further improvement electron mobility in n-MISFET using high-k gate stacks combined with oxidation. The peak is about 1500 cm2/Vsec, which the highest one to date among unstrained Si MISFETs. Ge-CMOS a strong candidate for beyond Si-CMOS.
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