Impact of oxidation and reduction annealing on the electrical properties of Ge/La2O3/ZrO2 gate stacks.
作者： Christoph Henkel , Per-Erik Hellström , Mikael Östling , Michael Stöger-Pollach , Ole Bethge
DOI: 10.1016/J.SSE.2012.04.004
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摘要: The paper addresses the passivation of Germanium surfaces by using layered La2O3/ZrO2 high-k dielectrics deposited Atomic Layer Deposition to be applied in Ge-based MOSFET devices. Improved elec ...
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