Simulation of hole-mobility in doped relaxed and strained Ge layers

摘要: As silicon based metal-oxide-semiconductor field-effect transistors (MOSFETs) are reaching the limits of their performance with scaling, alternative channel materials being considered to maintain in future complementary metal-oxide semiconductor technology generations. Thus there is renewed interest employing Ge as a material p-MOSFETs, due significant improvement hole mobility compared Si. Here we employ full-band Monte Carlo study transport properties Ge. We present and velocity-field characteristics for different directions p-doped relaxed strained layers. The simulations on method over-coming potentially large dynamic range scattering rates, which results from long-range nature unscreened Coulombic interaction. Our model ionized impurity includes affects Lindhard screening, coupled phase-shift, multi-ion corrections along plasmon scattering...