作者: M.B. Anand , M. Yamada , H. Shibata
DOI: 10.1109/VLSIT.1996.507801
关键词: Interconnection 、 Relative permittivity 、 Dielectric 、 Lead (geology) 、 Process (computing) 、 Permittivity 、 Gate dielectric 、 Electronic engineering 、 High-κ dielectric 、 Computer science
摘要: We have proposed a gas-dielectric interconnect process, and demonstrated its feasibility. While several engineering problems need to tackled before the process is manufacturable, incentive for further development of this huge since it can lead minimum physical value relative dielectric constant, 1.0.