Multilevel interconnect structure with low-k dielectric and method of fabricating the structure
作者： Leonard Forbes , Kie Y. Ahn
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摘要: A multilevel interconnect structure with a low-k dielectric constant is fabricated in an integrated circuit by the steps of depositing layer photoresist on substrate assembly, etching to form openings, forming metal fill openings and then removing by, for example, ashing. The supported which filled formed photoresist.
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