Thermal design and analysis of uncooled infrared senor in standard CMOS
作者： Rong Chen , Ting Yu , Yuchun Feng , Dasong Peng , Fengqi Yu
DOI: 10.1109/NEMS.2010.5592438
关键词: Thermal 、 Microfabrication 、 Transient (oscillation) 、 Infrared 、 Materials science 、 Optoelectronics 、 Thermal analysis 、 Time constant 、 Analytical chemistry 、 CMOS 、 Counterpoise
摘要: This paper presents the thermal design and analysis of uncooled infrared sensor fabricated in SMIC standard 0.18μm CMOS technology. The steady-state transient simulations have been done by finite-element methods (FEM). effects membrane parameters on performance are investigated. simulation results show that time constant temperature rise pixel increasing with size absorbing layer increment, increment width polysilicon leads to decrement rise. In addition, counterpoise these two parameters, a group optimized thermally isolated is given.
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