Low-cost small-pixel uncooled infrared detector for large focal plane arrays using a standard CMOS process

摘要: This paper reports the development of a low-cost, small pixel uncooled infrared detector using standard CMOS process. The is based on suspended and thermally isolated p+-active/n-well diode whose forward voltage changes due to an increase in temperature with absorbed radiation. obtained simple post-CMOS etching steps dies fabricated n-well process are achieved without needing any deposition or lithography, therefore, cost almost equal chip. Before suspending electrochemical etch-stop technique TMAH, required etch openings reach silicon substrate created dry while metal layers used as protection mask. Since mask implemented available layers, can be reduced significantly, allowing implement sizes reasonable fill factor. approach 40micrometers x40micrometers factor 44%, suitable for large format FPAs. p++)-active/n-well has low 1/f noise, its single crystal nature bias requirement. Optimum performance when biased at 20(mu) A, where self-heating effect less than 0.5K. Measurements calculations show that this new thermal conductance (Gth) 1.4E-7W/K provides responsivity (R) 5800V/W detectivity (D*) value 1.9x9cm(root)Hz/W scanned 30fps electrical bandwidth 4kHz. If 64x64 128x128 FPA sufficient number parallel readout channels, these FPAs will provide NETD 195mK considering only noise. When noise included, expected below 300mK. Such very ultra low-cost imaging applications.