Screening Effect and Quantum Transport in a Silicon Inversion Layer in Strong Magnetic Fields
作者： Tsuneya Ando
DOI: 10.1143/JPSJ.43.1616
关键词: Landau quantization 、 Physics 、 Surface roughness 、 Condensed matter physics 、 Scattering 、 Random phase approximation 、 Cyclotron resonance 、 Screening effect 、 Born approximation 、 Density of states
摘要: The broadening of Landau levels and the transport quantities, such as the transverse and Hall conductivity and cyclotron resonance linewidth, are calculated in an inversion layer on the (100) surface of p-type Si at zero temperature. Main scattering mechanisms are assumed to be charged impurity scattering and surface roughness scattering. A new expression for the surface roughness scattering is obtained. The self-consistent Born approximation is employed for the effect of scattering, and the random phase approximation for the screening …
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