Surface Roughness Scattering in MOS Structures
作者： Raheel Shah , Merlyne DeSouza
DOI: 10.1007/978-90-481-8776-8_11
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摘要: The comprehensive Ando’s surface roughness (SR) model examined for nMOSFETs. Four distinct source terms contribute in SR scattering. Relative strength of these contributing are evaluated and compared. most influential term turned out to be due scattering with the “physical steps” at interface. Remote is also significant ultra-thin MOS structures. proposed Gamiz et al. remote studied. It shown that modification necessary order observe full impact rms height abrupt “steps”.
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