A non-linear ReRAM cell with sub-1μA ultralow operating current for high density vertical resistive memory (VRRAM)
作者： Seong-Geon Park , Min Kyu Yang , Hyunsu Ju , Dong-Jun Seong , Jung Moo Lee
DOI: 10.1109/IEDM.2012.6479084
关键词: Electrical engineering 、 Resistive random-access memory 、 Current (fluid) 、 Power (physics) 、 Materials science 、 Array data structure 、 Optoelectronics 、 Low-power electronics 、 Nonlinear system 、 Layer (electronics) 、 High density
摘要: A non-linear RRAM cell with sub-1μA ultralow operating current has been successfully fabricated for high density vertical ReRAM (VRRAM) applications. A uniform and reproducible …
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