Mechanism of Nonlinear Switching in HfO 2 -Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer
作者： Umesh Chand , Kuan-Chang Huang , Chun-Yang Huang , Tseung-Yuen Tseng
关键词: Barrier layer 、 Quantum tunnelling 、 Nanotechnology 、 Resistive random-access memory 、 Crossbar switch 、 Band gap 、 Tin 、 Materials science 、 Nonlinear system 、 Optoelectronics 、 Layer (electronics)
摘要: In this paper, the nonlinear switching mechanism of Ti/HfO2/Al2O3/TiN crossbar structure resistive random access memory device with good reliability is investigated. The nonlinearity can be revealed by inserting a large bandgap an Al2O3 thin layer between TiN bottom electrode and HfO2 film. caused Flower–Nordheim tunneling involves barrier layer. Besides, behavior also sensitive to thickness A high factor 37, endurance more than $10^{4}$ , retention properties are achieved in Ti/HfO2/Al2O3 (1-nm)/TiN structure.
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