Temperature dependence of photoluminescence of semiconductor quantum dots upon indirect excitation in a SiO2 dielectric matrix

摘要: The processes of excitation and relaxation confined excitons in semiconductor quantum dots upon indirect high-energy have been considered. temperature behavior photoluminescence a SiO2 dielectric matrix has described using model accounting for the process population quantum-dot triplet states transfer through mobile matrix. Analytical expressions that take into account two-stage three-stage schemes transitions obtained. applicability these analyzing fluorescence properties demonstrated example silicon carbon nanoparticles thin-film It shown complex character dependences can be an indication multistage excited dots. concepts developed this study allow one to predict form different