Model of photoluminescence from ion-synthesized silicon nanocrystal arrays embedded in a silicon dioxide matrix
作者： S. N. Nagornykh , V. I. Pavlenkov , A. N. Mikhailov , A. I. Belov , L. V. Krasil’nikova
DOI: 10.1134/S1063784212120213
关键词: Ion 、 Photon energy 、 Silicon dioxide 、 Materials science 、 Singlet state 、 Photoluminescence 、 Excited state 、 Optoelectronics 、 Nanocrystal 、 Molecular physics 、 Exciton
摘要: A four-level model of photoluminescence from Si nanocrystal arrays embedded in a SiO2 matrix is suggested. The allows for thermally activated transitions between singlet and triplet levels the exchange-split energy state an exciton excited silicon nanocrystal. An expression derived temperature dependence intensity monochromatic components. correlation found amount splitting emitted photon by comparing data with our experimental ion-synthesized nanocrystals matrix. explains finiteness at temperatures close to 0 K nonmonotonicity run intensity.
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