Thermal activation energy of crystal and amorphous nano-silicon in SiO2 matrix

摘要: Temperature and size dependence of photoluminescence (PL) nano-silicon embedded in SiO2 matrix samples were studied. In these measurements, four with deferent implantation dose showed their similar tendency. Their nano-structure was investigated by high resolution electron microscopy (HREM) selected area diffraction (SAD) which confirmed that only those prepared the higher Si formed crystal nano-silicon. The further analysis thermal activation energy on PL emission demonstrates different behaviors. This leads to an optical method detect through comparing Calcott model, a model implies from nanocrystallites. Furthermore, appearance amorphous is discussed light recombination mode localized carriers band-tail state.