Dependence of the optical gap of Si quantum dots on the dot size

摘要: The dependence of the optical gap Si quantum dots, embedded in a SiO2 insulator host, on dot size was calculated terms an envelope-function approximation. It is shown that consideration finiteness band and abrupt change effective mass at Si-SiO2 interface significantly decreases dots comparison with model which potential barriers for electrons holes are assumed to be infinitely high. obtained results good agreement experimental data.