Optical gap of P-doped Si nanocrystals
作者： A. A. Konakov , V. A. Belyakov , V. A. Burdov
DOI: 10.1134/S102745101209008X
关键词: Coulomb 、 Nanotechnology 、 Doping 、 Impurity 、 Condensed matter physics 、 Thin film 、 Electron 、 Nanocrystal 、 Materials science
摘要: The optical gap of Si nanocrystals strongly doped with phosphorus has been calculated. energy levels the electron and hole ground states in nanocrystal were found as functions size P concentration framework envelope function approximation under assumption uniform impurity distribution over volume. It is shown that introducing into leads to a decrease its gap. This related strong shift level produced by short-range part Coulomb electron-P-ion interaction.
springer.com
sci-hub.se 参考文章(11)
A A Konakov, V A Burdov, Optical gap of silicon crystallites embedded in various wide-band amorphous matrices: role of environment Journal of Physics: Condensed Matter. ,vol. 22, pp. 215301- ,(2010) , 10.1088/0953-8984/22/21/215301
Vladimir A. Belyakov, Vladimir A. Burdov, Valley-orbit splitting in doped nanocrystalline silicon: k∙p calculations Physical Review B. ,vol. 76, pp. 045335- ,(2007) , 10.1103/PHYSREVB.76.045335
Minoru Fujii, Atsushi Mimura, Shinji Hayashi, Keiichi Yamamoto, Photoluminescence from Si nanocrystals dispersed in phosphosilicate glass thin films: Improvement of photoluminescence efficiency Applied Physics Letters. ,vol. 75, pp. 184- 186 ,(1999) , 10.1063/1.124313
V A Belyakov, A I Belov, A N Mikhaylov, D I Tetelbaum, V A Burdov, Improvement of the photon generation efficiency in phosphorus-doped silicon nanocrystals: Γ–X mixing of the confined electron states Journal of Physics: Condensed Matter. ,vol. 21, pp. 045803- 045803 ,(2009) , 10.1088/0953-8984/21/4/045803
V. A. Burdov, Dependence of the optical gap of Si quantum dots on the dot size Semiconductors. ,vol. 36, pp. 1154- 1158 ,(2002) , 10.1134/1.1513861
Minoru Fujii, Kimiaki Toshikiyo, Yuji Takase, Yasuhiro Yamaguchi, Shinji Hayashi, Below bulk-band-gap photoluminescence at room temperature from heavily P- and B-doped Si nanocrystals Journal of Applied Physics. ,vol. 94, pp. 1990- 1995 ,(2003) , 10.1063/1.1590409
W. Kohn, J. M. Luttinger, Theory of Donor States in Silicon Physical Review. ,vol. 98, pp. 915- 922 ,(1955) , 10.1103/PHYSREV.98.915
A. I. Belov, V. A. Belyakov, V. A. Burdov, A. N. Mikhailov, D. I. Tetelbaum, Phosphorus doping as an efficient way to modify the radiative interband recombination in silicon nanocrystals Journal of Surface Investigation-x-ray Synchrotron and Neutron Techniques. ,vol. 3, pp. 527- 533 ,(2009) , 10.1134/S1027451009040077
V A Belyakov, V A Burdov, Anomalous splitting of the hole states in silicon quantum dots with shallow acceptors Journal of Physics: Condensed Matter. ,vol. 20, pp. 025213- ,(2008) , 10.1088/0953-8984/20/02/025213
Vladimir A. Belyakov, Vladimir A. Burdov, Γ−Xmixing in phosphorus-doped silicon nanocrystals: Improvement of photon generation efficiency Physical Review B. ,vol. 79, pp. 035302- ,(2009) , 10.1103/PHYSREVB.79.035302