Magnetic tunnel junctions with ZnSe barriers
作者： Xin Jiang , Alex F. Panchula , Stuart S. P. Parkin
DOI: 10.1063/1.1630160
关键词: Sputter deposition 、 Quantum tunnelling 、 Ion beam sputtering 、 Analytical chemistry 、 Materials science 、 Evaporation (deposition) 、 Condensed matter physics 、 Vacuum deposition 、 Tunnel magnetoresistance 、 Semiconductor thin films 、 Magnetoresistance
摘要: Magnetic tunnel junctions with ZnSe barriers were fabricated a combination of magnetron sputtering, ion beam and effusion cell evaporation. Tunneling magnetoresistance values ∼10% are observed at room temperature. The temperature barrier thickness dependences the junction resistance tunneling consistent predominant direct mechanism when is less than ∼10 nm thick.
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