作者: Soohong Kim , Iksu Byun , Inrok Hwang , Jinsoo Kim , Jinsik Choi
DOI: 10.1143/JJAP.44.L345
关键词:
摘要: ZrO2 films have been deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition methods. Giant and stable conductivity switching behaviors with maximum on/off ratio of 106 endurance 105 times are observed in a typical Pt/ZrO2/Pt structure. The structure exhibits two ohmic the low-voltage region (V < 1.4 V) depending value previously applied voltage Schottky-type conduction high-voltage (1.4 V< V <8.9 V). It seems that result from changes both Schottky barrier bulk controlled voltages.