Dielectric property and conduction mechanism of ultrathin zirconium oxide films
作者： J. P. Chang , Y.-S. Lin
DOI: 10.1063/1.1418265
关键词:
摘要: Stoichiometric, uniform, amorphous ZrO2 films with an equivalent oxide thickness of ∼1.5 nm and a dielectric constant ∼18 were deposited by atomic layer controlled deposition process on silicon for potential applications in metal–oxide–semiconductor (MOS) devices. The conduction mechanism is identified as Schottky emission at low electric fields Poole–Frenkel high fields. MOS devices showed leakage current, small hysteresis (<50 mV), interface state density (∼2×1011 cm−2 eV−1). Microdiffraction high-resolution transmission electron microscopy localized monoclinic phase α-ZrO2 interfacial ZrSixOy which has corresponding 11.
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