Reducing widening of threshold voltage distributions in a memory device due to temperature change

摘要: Apparatuses and techniques are described for programming a memory device with reduced temperature-based changes in the threshold voltage distribution (Vth). Different cells can have different values of temperature coefficient, Tco, high-Tco may tend to be at lower tail Vth distribution. In one aspect, programmed using first set verify voltages which temperature-independent. If time is less than specified temperature, identified further second pass temperature-dependent. Further, configured provide narrower width program pass. For example, use smaller pulse step size and/or an elevated bit line voltage.