Reentrant behavior of the density vs temperature of indium islands on GaAs(111)A
作者： Artur Tuktamyshev , Alexey Fedorov , Sergio Bietti , Shiro Tsukamoto , Roberto Bergamaschini
DOI: 10.3390/NANO10081512
关键词: Phase transition 、 Materials science 、 Indium 、 Condensed matter physics 、 Deposition temperature 、 Reentrancy 、 Cubic crystal system
摘要: We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as function deposition temperature. The expected increase in with decreasing temperature, indeed, is observed only down to 160 °C, where undertake liquid-to-solid phase transition. Further temperature causes sizeable reduction island density. An additional, increasing below 80 °C. attribute above complex liquid-solid transition and island-island interaction which takes place between crystalline presence strain. Indium solid grown at temperatures °C face-centered cubic crystal structure.
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