Atomic processes in crystal growth
作者： John A Venables
DOI: 10.1016/0039-6028(94)90698-X
关键词: Physical chemistry 、 Chemical vapor deposition 、 Crystal growth 、 Layer (electronics) 、 Surface science 、 Nucleation 、 Semiconductor 、 Thin film 、 Chemical physics 、 Deposition (phase transition) 、 Chemistry
摘要: Abstract The thermodynamic and kinetic processes which are involved in the early stages of crystal growth discussed, with especial reference to vapor deposition thin films. atomic taking place during described terms rate diffusion equations; concept “competitive capture” is outlined, where adatoms forced choose between competing sinks. use microscopy surface physics techniques study nucleation films emphasised. Examples island (Volmer-Weber), layer (Frank-van der Merwe) plus (Stranski-Krastanov) metal/insulator, metal/semi-conductor semiconductor/semiconductor systems given.
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