Magnetotransport and cyclotron resonance investigations of the 2D electron gas in e−-beam irradiated AlGaAs/GaAs heterojunctions

摘要: Abstract A 2D electron gas (2DEG) with a controlled density of repulsive scatters at the interface is obtained by irradiation AlGaAs/GaAs heterojunctions 1 MeV electrons. Measurements magnetotransport yield that plateaus in Hall resistance are their quantized values R xy = h / e 2 v ( integer filling factor) but show significant broadening. The lineposition ω c cyclotron resonance found to be shifted higher energies such rmc ) 0 + ω) energy before and ω≊30 cm − . From investigation on partially up fully annealed samples we proportional n sc SDEG.