Percolation at v=1 in the 2D electron system oF e−beam irradiated AlGaAs/GaAs heterostructures

作者: H. Sigg , J. Richter , K. von Klitzing , K. Ploog

DOI: 10.1016/0039-6028(90)90828-V

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摘要: Abstract We report on the low temperature AC and DC magneto transport properties of e − -beam irradiated AlGaAs/GaAs heterojunctions. This work has been motivated by earlier investigations cyclotron resonance (CR) which show a spectacular difference between mobility. While in such samples reflects very mobility carriers, CR linewidth is small for high frequencies at magnetic fields corresponding to extreme quantum limit single Landau level occupation, suggesting carriers. that longitudinal resistance strongly increases when system this an apparent CR. discrepancy behaviour attributed percolation 2D electron system.

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