Cyclotron resonance in donor and acceptor δ -doped Al x Ga 1 − x As/GaAs heterostructures

摘要: Cyclotron resonance experiments have been performed to study the influence of donor and acceptor impurities on two-dimensional electron gas in ${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As/GaAs heterostructures. Two series samples prepared doped with additional Si Be at well-defined spacings from interface various concentrations. A characteristic behavior cyclotron specific doping species is found. Donor-doped exhibit a pronounced filling-factor-correlated oscillation linewidth effective mass. Acceptor-doped second, frequency-shifted over wide range magnetic range, whose becomes extremely narrow high fields tends an approximately constant value.