Temperature dependence of the electrical characteristics of Yb/p-InP tunnel metal-insulator-semiconductor junctions
作者： A. Singh , K. C. Reinhardt , W. A. Anderson
DOI: 10.1063/1.346358
关键词: Semiconductor 、 Condensed matter physics 、 Atmospheric temperature range 、 Diode 、 Thermionic emission 、 Evaporation (deposition) 、 Saturation current 、 Schottky diode 、 Indium 、 Chemistry
摘要: High barrier Yb/p‐InP metal‐insulator‐semiconductor (MIS) and metal‐semiconductor (MS) junctions were fabricated by evaporation of Yb on InP:Zn substrates. The capacitance‐voltage (C‐V) current‐voltage (I‐V) characteristics these devices measured over a wide range temperatures. From the room‐temperature forward I‐V data, values 1.06 1.30 for ideality factor (n) obtained MIS MS diodes, respectively. higher value n was attributed to an order magnitude density interface states in junction than diodes. I‐V/T data temperature 190–400 K, indicated that current transport controlled thermionic‐field emission (TFE) mechanism. analysis reverse saturation I0 terms TFE model provided 1.07±0.03 V zero bias, height (φ0) which close agreement with φ0=1.03±0.04 V, ...
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