On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers
作者： Y.P. Song , R.L. Van Meirhaeghe , W.H. Laflère , F. Cardon
DOI: 10.1016/0038-1101(86)90145-0
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摘要: … For layers of that thickness, the shift of the Mott-Schottky plot can be neglected. Circular dots of Al were then evaporated at a pressure of 1O-6 Torr to form the Schottky barriers. The …
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