Current–voltage–temperature and capacitance–voltage–temperature characteristics of TiW alloy/p-InP Schottky barrier diode
作者： Jun Chen , Qingsong Wang , Jiabing Lv , Hengjing Tang , Xue Li
DOI: 10.1016/J.JALLCOM.2015.07.239
关键词:
摘要: Abstract We systematically characterize TiW alloy/p-InP Schottky barrier diode using current–voltage (I–V) and capacitance–voltage (C–V) measurements for different temperatures from 300 K to 400 K. The electrical parameters such as height (Φb0) ideality factor (n) have been obtained the thermal emission (TE) theory. Φb0 increases n decreases with increasing of temperature. temperature dependency characteristics is interpreted by TE theory assuming a Gaussian distribution heights according inhomogeneous model. mean Φ ¯ b 0 ( T = K ) 1.09 V standard deviation σ0 = 135 mV are plotting versus 1/2kT, indicating heights. value extracted Richardson constant A* 56.2504 Acm−2 K−2, which in good agreement theoretical value. All these results show that carrier transport process can be modeled In addition, C–V analyzed taking into account series resistance (Rs). interface states shows increase state density midgap towards top valence band.
elsevier.com
sci-hub.se 参考文章(39)
M Bı̇ber, C Temı̇rcı̇, ABDULMECİT Türüt, Barrier height enhancement in the Au/n-GaAs Schottky diodes with anodization process Journal of Vacuum Science & Technology B. ,vol. 20, pp. 10- 13 ,(2002) , 10.1116/1.1426369
P.G. McCafferty, A. Sellai, P. Dawson, H. Elabd, BARRIER CHARACTERISTICS OF PtSi/p-Si SCHOTTKY DIODES AS DETERMINED FROM I-V-T MEASUREMENTS Solid-state Electronics. ,vol. 39, pp. 583- 592 ,(1996) , 10.1016/0038-1101(95)00162-X
R.F. Schmitsdorf, W. Mönch, T.U. Kampen, Correlation between barrier height and interface structure of Ag/Si(111) Schottky diodes Surface Science. ,vol. 324, pp. 249- 256 ,(1995) , 10.1016/0039-6028(94)00791-8
Ahmet Gümüş, ABDULMECİT Türüt, N Yalcin, Temperature dependent barrier characteristics of CrNiCo alloy Schottky contacts on n-type molecular-beam epitaxy GaAs Journal of Applied Physics. ,vol. 91, pp. 245- 250 ,(2002) , 10.1063/1.1424054
E. Hökelek, G. Y. Robinson, Schottky contacts on chemically etched p‐ and n‐type indium phosphide Applied Physics Letters. ,vol. 40, pp. 426- 428 ,(1982) , 10.1063/1.93101
Mehmet Biber, Abdulmecit Türüt, The Cu/n-GaAs Schottky barrier diodes prepared by anodization process Journal of Electronic Materials. ,vol. 31, pp. 1362- 1368 ,(2002) , 10.1007/S11664-002-0123-6
A. Tataroğlu, Ş. Altındal, Characterization of current-voltage (I-V) and capacitance-voltage-frequency (C-V-f) features of Al/SiO2/p-Si (MIS) Schottky diodes Microelectronic Engineering. ,vol. 83, pp. 582- 588 ,(2006) , 10.1016/J.MEE.2005.12.014
Ş. Altındal, S. Karadeniz, N. Tuğluoğlu, A. Tataroğlu, The role of interface states and series resistance on the I–V and C–V characteristics in Al/SnO2/p-Si Schottky diodes Solid-state Electronics. ,vol. 47, pp. 1847- 1854 ,(2003) , 10.1016/S0038-1101(03)00182-5
H. Uslu, Ş. Altındal, U. Aydemir, İ. Dökme, İ.M. Afandiyeva, The interface states and series resistance effects on the forward and reverse bias I–V, C–V and G/ω-V characteristics of Al–TiW–Pd2Si/n-Si Schottky barrier diodes Journal of Alloys and Compounds. ,vol. 503, pp. 96- 102 ,(2010) , 10.1016/J.JALLCOM.2010.04.210
Y.P. Song, R.L. Van Meirhaeghe, W.H. Laflère, F. Cardon, On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers Solid-state Electronics. ,vol. 29, pp. 633- 638 ,(1986) , 10.1016/0038-1101(86)90145-0