Efficiency-Droop Suppression by Using Large-Bandgap AlGaInN Thin Barrier Layers in InGaN Quantum-Well Light-Emitting Diodes
作者： Guangyu Liu , Jing Zhang , Chee Keong Tan , N. Tansu
DOI: 10.1109/JPHOT.2013.2255028
关键词: Wide-bandgap semiconductor 、 Optoelectronics 、 Band gap 、 Light-emitting diode 、 Diode 、 Thin layers 、 Materials science 、 Electron mobility 、 Quantum well 、 Voltage droop
摘要: The electrical and optical characteristics of InGaN quantum-well light-emitting diodes with large-bandgap AlGaInN thin barriers were analyzed the consideration carrier transport effect for efficiency droop suppression. lattice-matched quaternary alloys different compositions, thicknesses, positions employed as barrier layers (1-2 nm) surrounding QW in LED structures. increased effective heights led to suppression leakage compared conventional LEDs GaN only. current work provides a comprehensive simulation taking into self-consistent manner, finding indicated use or AlInN sufficient suppressing InGaN-based LEDs. insertion Al0.82In0.18N showed least phenomenon at high density among investigated thickness study that layer (<; 2 material region was
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