Effect of an indium-doped barrier on enhanced near-ultraviolet emission from InGaN/AlGaN: In multiple quantum wells grown on Si(111)
作者： Jiejun Wu , Guoyi Zhang , Xianglin Liu , Qinsheng Zhu , Zhanguo Wang
DOI: 10.1088/0957-4484/18/1/015402
关键词:
摘要: Low indium content InGaN/AlGaN multiple quantum wells (MQWs) have been grown on Si(111) substrate by metal-organic chemical vapour deposition (MOCVD). A new method of using an isoelectronic indium-doped AlGaN barrier has found to be very effective in improving the crystalline quality and interfacial abruptness InGaN well layers. We grew five periods In0.06Ga0.94N/Al0.20Ga0.80N:In MQWs with In-doped layers obtained strong near-ultraviolet (UV) emission (similar 400 nm) at room temperature. An improves room-temperature PL intensity MQWs, making it a candidate for near-UV source Si substrate.
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