The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes.
作者： Ming-Ta Tsai , Chung-Ming Chu , Che-Hsuan Huang , Yin-Hao Wu , Ching-Hsueh Chiu
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摘要: In this study, we have grown 380-nm ultraviolet light-emitting diodes (UV-LEDs) based on InGaN/AlInGaN multiple quantum well (MQW) structures free-standing GaN (FS-GaN) substrate by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD), and investigated the relationship between carrier localization degree FS-GaN. The micro-Raman shift peak mapping image shows low standard deviation (STD), indicating that UV-LED epi-wafer of curvature MQWs weak quantum-confined Stark effect (QCSE) were grown. High-resolution X-ray diffraction (HRXRD) analyses demonstrated high-order satellite peaks clear fringes them for UV-LEDs FS-GaN substrate, from which interface roughness (IRN) was estimated. temperature-dependent photoluminescence (PL) measurement confirmed exhibited better confinement. Besides, high-resolution transmission electron microscopy (HRTEM) energy-dispersive spectrometer (EDS) images verified fairly uniform distribution indium more ordered MQW structure. Clearly, can not only improve light output power but also reduce efficiency droop phenomenon at high injection current. Based results mentioned above, offer with benefits, such as crystal quality small degree, compared sapphire.
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