作者: Christiane Poblenz , James Raring , Rajat Sharma
DOI:
关键词: Physics 、 Optics 、 Electromagnetic radiation 、 Wavelength 、 Layer (electronics) 、 Substrate (electronics) 、 Gallium 、 Diode 、 Optoelectronics 、 Epitaxy 、 Light-emitting diode
摘要: A light emitting diode device has a gallium and nitrogen containing substrate with surface region an epitaxial layer overlying the region. Preferably includes first active configured to emit electromagnetic radiation having wavelength ranging from about 405 nm 490 nm; second 491 590 third 591 700 nm. p-type covers first, second, regions.