Step arrangement design and nanostructure self-organization on Si surfaces
作者： Toshio Ogino , Hiroki Hibino , Yoshikazu Homma
DOI: 10.1016/S0169-4332(97)80158-4
关键词: Nanotechnology 、 Misorientation 、 Self-organization 、 Silicon 、 Optoelectronics 、 Annealing (metallurgy) 、 Nanolithography 、 Nanostructure 、 Novel technique 、 Materials science 、 Hydrogen atmosphere
摘要: A novel technique for wafer-scale rearrangement of atomic steps due to misorientation on the Si(111) surfaces is proposed. The process controls step motion at high temperatures by using patterns formed in advance. With high-temperature annealing, originally randomly distributed surface are rearranged along pattern and remain ordered after initial has disappeared. During this process, a nanostructure consisting step-bunched debunched areas self-organized forms micro-step-network. Another application formation ultralarge-scale step-free surfaces. By controlling behavior patterned surfaces, spacing as large 10 μm can be obtained. This paper also compares heating an ultrahigh vacuum with furnace annealing hydrogen atmosphere shows that both techniques used designing arrangements.
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