Atomic Force Microscopy Observation of Si(100) Surface after Hydrogen Annealing

摘要: Hydrogen gas play an important role in the epitaxial growth process, acting as both a high temperature precleaning ambient and carrier during growth. The effect of hydrogen on morphology microroughness Si(100) Si(111) surfaces was investigated using force microscopy under atmospheric air ambient. surface after H 2 annealing showed periodic terrace step structure reflecting double-domain (2×1+1×2) reconstructed structure. This maintained even subsequent HCl vapor etching layer deposition Si process