The concept of effective electronic stopping power for modelling the damage cross-section in refractory oxides irradiated by GeV ions or MeV clusters

作者: B. Canut , S. M. M. Ramos

DOI: 10.1080/10420159808220019

关键词: Lithium niobateProjectileAtomic physicsLattice (order)Electronic energyAluminium oxidesIrradiationIonRutherford backscattering spectrometryChemistry

摘要: Abstract Single crystals of Al2O3 and LiNbO3 were bombarded at room temperature with either GeV ions (up to 238U) or MeV carbon clusters C60). Depending on the irradiation conditions, electronic stopping power S e ranged from 3 76keV nm−1. Rutherford Backscattering Spectrometry in Channeling geometry (RBS-C) evidenced lattice disorder sample surface which was ascribed high density energy deposited by incident projectile. The damage cross-sections A d varied 350 nm2, highest values being obtained, a given e, irradiated C60 clusters. For each target, found depend both projectile velocity. In this paper, we propose modelling based new concept effective S∗e. our approach, target is characterized two parameters: diffusion length L critical W c. calculation S∗e takes into account L, c radial distribution ene...

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