GROWTH OF AMORPHOUS-LAYER-FREE MICROCRYSTALLINE SILICON ON INSULATING GLASS SUBSTRATES BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION
作者： Jiang-Huai Zhou , Kazuyuki Ikuta , Tetsuji Yasuda , Takahide Umeda , Satoshi Yamasaki
DOI: 10.1063/1.119958
关键词: Layer (electronics) 、 Amorphous solid 、 Materials science 、 Chemical vapor deposition 、 Analytical chemistry 、 Silicon 、 Dilution 、 Plasma-enhanced chemical vapor deposition 、 Hydrogen 、 Combustion chemical vapor deposition
摘要: Using a triode plasma-enhanced chemical vapor deposition (PECVD) system and high H2 dilution of SiH4 (down to SiH4/H2 gas flow ratio 0.33/99), amorphous-layer-free μc-Si:H has been successfully grown on insulating glass substrates in the continuous PECVD growth mode. It is demonstrated that an ultrathin layer such can serve as seed facilitate epitaxial-like (seeded growth).
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