Ion bombardment effects on microcrystalline silicon growth mechanisms and on the film properties

摘要: The role of ions on the growth microcrystalline silicon films produced by standard hydrogen dilution silane in a radio frequency glow discharge is studied through analysis structural properties thick and thin films. Spectroscopic ellipsometry shown to be powerful technique probe their in-depth structure. It allows evidence complex morphology consisting an interface layer, bulk subsurface layer. ion energy has been tuned codepositing series samples grounded electrode powered electrode, as functions pressure power. On one hand, reducing increase total depositing favors formation large grains results improved transport properties, but leaves amorphous layer with substrate. other we achieve fully crystallized glass substrates under conditions high bombardment. We suggest th...