Role of mobile hydrogen in the amorphous silicon recrystallization

摘要: The plasma deposition of nanocrystalline silicon thin films is usually performed under a high flux atomic hydrogen and hydrogenated chemical species. growth mechanisms are investigated using the layer‐by‐layer dense silicon, obtained at 250 °C by alternating SiH4 H2 plasmas. In steady state, minimum exposure time to necessary recrystallize amorphous top layer (10–85 A). It shown that this critical determined diffusion some mobile H through a‐Si:H layer. recrystallization discussed in relation leading nanovoid broken bond formation processes.