The high deposition of microcrystalline silicon thin film by very high frequency plasma enhanced chemical vapour deposition and the fabrication of solar cells
作者： Chen Yong-Sheng , Wang Jian-Hua , Lu Jing-Xiao , Zheng Wen , Gu Jin-Hua
DOI: 10.1088/1674-1056/17/9/054
关键词: Deposition (chemistry) 、 Ion plating 、 Chemical engineering 、 Combustion chemical vapor deposition 、 Thin film 、 Pulsed laser deposition 、 Materials science 、 Sputter deposition 、 Plasma-enhanced chemical vapor deposition 、 Plasma processing
摘要: This paper reports that the intrinsic microcrystalline silicon (μc-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200°C aim to increase rate. An of rate 0.88 nm/s is obtained by using a excitation frequency 75 MHz. combination higher pressure, an increased silane concentration, and discharge powers. In addition, transient behaviour, which can decrease film crystallinity, could be prevented filling background gas H2 prior ignition, selecting proper discharging time after flow injection. Material under these conditions 0.78 maintains crystallinity fine electronic properties. By H-plasma treatment before i-layer deposition, single junction μc-Si:H solar cells 5.5% efficiency fabricated.
harvard.edu
sci-hub.se 参考文章(28)
M. Losurdo, M.M. Giangregorio, M. Luchena, P. Capezzuto, G. Bruno, R.G. Toro, G. Malandrino, I.L. Fragalà, R. Lo Nigro, Structural–optical study of high-dielectric-constant oxide films Applied Surface Science. ,vol. 253, pp. 322- 327 ,(2006) , 10.1016/J.APSUSC.2006.06.004
B. Kalache, A. I. Kosarev, R. Vanderhaghen, P. Roca i Cabarrocas, Ion bombardment effects on microcrystalline silicon growth mechanisms and on the film properties Journal of Applied Physics. ,vol. 93, pp. 1262- 1273 ,(2003) , 10.1063/1.1524707
O Vetterl, F Finger, R Carius, P Hapke, L Houben, O Kluth, A Lambertz, A Mück, B Rech, H Wagner, Intrinsic microcrystalline silicon: A new material for photovoltaics Solar Energy Materials and Solar Cells. ,vol. 62, pp. 97- 108 ,(2000) , 10.1016/S0927-0248(99)00140-3
C. Godet, N. Layadi, P. Roca i Cabarrocas, Role of mobile hydrogen in the amorphous silicon recrystallization Applied Physics Letters. ,vol. 66, pp. 3146- 3148 ,(1995) , 10.1063/1.113704
T. Roschek, T. Repmann, J. Müller, B. Rech, H. Wagner, Comprehensive study of microcrystalline silicon solar cells deposited at high rate using 13.56 MHz plasma-enhanced chemical vapor deposition Journal of Vacuum Science and Technology. ,vol. 20, pp. 492- 498 ,(2002) , 10.1116/1.1450585
Wu Zhi-Meng, Lei Qing-Song, Geng Xin-Hua, Zhao Ying, Sun Jian, Xi Jian-Ping, Effect of substrate temperature and pressure on properties of microcrystalline silicon films Chinese Physics. ,vol. 15, pp. 1320- 1324 ,(2006) , 10.1088/1009-1963/15/6/031
A. Matsuda, Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasma Journal of Non-crystalline Solids. pp. 767- 774 ,(1983) , 10.1016/0022-3093(83)90284-3
Michio Kondo, Yasuyuki Nasuno, Hiroshi Mase, Takehito Wada, Akihisa Matsuda, Low-temperature fabrication of microcrystalline silicon and its application to solar cells Journal of Non-crystalline Solids. ,vol. 299302, pp. 108- 112 ,(2002) , 10.1016/S0022-3093(01)01182-6
M. N. van den Donker, B. Rech, F. Finger, W. M. M. Kessels, M. C. M. van de Sanden, Highly efficient microcrystalline silicon solar cells deposited from a pure SiH4 flow Applied Physics Letters. ,vol. 87, pp. 263503- ,(2005) , 10.1063/1.2152115
A.V Shah, J Meier, E Vallat-Sauvain, N Wyrsch, U Kroll, C Droz, U Graf, Material and solar cell research in microcrystalline silicon Solar Energy Materials and Solar Cells. ,vol. 78, pp. 469- 491 ,(2003) , 10.1016/S0927-0248(02)00448-8