The effect of initial discharge conditions on the properties of microcrystalline silicon thin films and solar cells

作者: Chen Yong-Sheng , Yang Shi-E , Wang Jian-Hua , Lu Jing-Xiao , Gao Xiao-Yong

DOI: 10.1088/1674-1056/19/5/057205

关键词:

摘要: This paper studies the effects of silane back diffusion in initial plasma ignition stage on properties microcrystalline silicon (?c-Si:H) films by Raman spectroscopy and spectroscopic ellipsometry, through delaying injection SiH4 gas to reactor before ignition. Compared with standard discharge condition, delayed condition could prevent from deposition region effectively, which induced formation a thick amorphous incubation layer interface between bulk film glass substrate. Applying this method, it obtains improvement spectral response middle long wavelength combining method solar cell fabrication. Finally, results are explained modifying zero-order analytical model, good agreement is found model experiments concerning optimum time.

参考文章(11)
Chen Yong-Sheng, Wang Jian-Hua, Lu Jing-Xiao, Zheng Wen, Gu Jin-Hua, Yang Shi-E, Gao Xiao-Yong, Guo Xue-Jun, Zhao Shang-Li, Gao Zhe, None, The high deposition of microcrystalline silicon thin film by very high frequency plasma enhanced chemical vapour deposition and the fabrication of solar cells Chinese Physics B. ,vol. 17, pp. 3464- 3470 ,(2008) , 10.1088/1674-1056/17/9/054
M. N. van den Donker, B. Rech, F. Finger, W. M. M. Kessels, M. C. M. van de Sanden, Highly efficient microcrystalline silicon solar cells deposited from a pure SiH4 flow Applied Physics Letters. ,vol. 87, pp. 263503- ,(2005) , 10.1063/1.2152115
M.M. Giangregorio, M. Losurdo, A. Sacchetti, P. Capezzuto, F. Giorgis, G. Bruno, An optical study of the correlation between growth kinetics and microstructure of μc-Si grown by SiH4-H2 PECVD Applied Surface Science. ,vol. 253, pp. 287- 291 ,(2006) , 10.1016/J.APSUSC.2006.05.094
Lihui Guo, Michio Kondo, Makoto Fukawa, Kimihiko Saitoh, Akihisa Matsuda, HIGH RATE DEPOSITION OF MICROCRYSTALLINE SILICON USING CONVENTIONAL PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION Japanese Journal of Applied Physics. ,vol. 37, ,(1998) , 10.1143/JJAP.37.L1116
M N van den Donker, B Rech, W M M Kessels, M C M van de Sanden, Transient depletion of source gases during materials processing: a case study on the plasma deposition of microcrystalline silicon New Journal of Physics. ,vol. 9, pp. 280- 280 ,(2007) , 10.1088/1367-2630/9/8/280
J. S. Custer, Michael O. Thompson, D. C. Jacobson, J. M. Poate, S. Roorda, W. C. Sinke, F. Spaepen, Density of amorphous Si Applied Physics Letters. ,vol. 64, pp. 437- 439 ,(1994) , 10.1063/1.111121
E. Amanatides, A. Hammad, E. Katsia, D. Mataras, High pressure regime of plasma enhanced deposition of microcrystalline silicon Journal of Applied Physics. ,vol. 97, pp. 073303- ,(2005) , 10.1063/1.1866477
B. Rech, T. Roschek, T. Repmann, J. Müller, R. Schmitz, W. Appenzeller, Microcrystalline silicon for large area thin film solar cells Thin Solid Films. ,vol. 427, pp. 157- 165 ,(2003) , 10.1016/S0040-6090(02)01210-5
Tobias Roschek, Bernd Rech, Joachim Müller, Ralf Schmitz, Heribert Wagner, Influence of the total gas flow on the deposition of microcrystalline silicon solar cells Thin Solid Films. ,vol. 451, pp. 466- 469 ,(2004) , 10.1016/J.TSF.2003.10.128
M. Sorokin, G.M.W. Kroesen, W.W. Stoffels, Temperature Dependence and Silane Consumption During Particle Formation in Ar–Silane RF Capacitively Coupled Plasma IEEE Transactions on Plasma Science. ,vol. 32, pp. 731- 737 ,(2004) , 10.1109/TPS.2004.826137