作者: Chen Yong-Sheng , Yang Shi-E , Wang Jian-Hua , Lu Jing-Xiao , Gao Xiao-Yong
DOI: 10.1088/1674-1056/19/5/057205
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摘要: This paper studies the effects of silane back diffusion in initial plasma ignition stage on properties microcrystalline silicon (?c-Si:H) films by Raman spectroscopy and spectroscopic ellipsometry, through delaying injection SiH4 gas to reactor before ignition. Compared with standard discharge condition, delayed condition could prevent from deposition region effectively, which induced formation a thick amorphous incubation layer interface between bulk film glass substrate. Applying this method, it obtains improvement spectral response middle long wavelength combining method solar cell fabrication. Finally, results are explained modifying zero-order analytical model, good agreement is found model experiments concerning optimum time.