Comprehensive study of microcrystalline silicon solar cells deposited at high rate using 13.56 MHz plasma-enhanced chemical vapor deposition

摘要: In this article we present a comprehensive study of microcrystalline silicon (μc-Si:H) p-i-n solar cells prepared by using plasma-enhanced chemical vapor deposition (PECVD) at 13.56 MHz excitation frequency. the first step cell development was performed in small area PECVD reactor showing relationship between process parameters and resulting performance. Subsequent up-scaling to substrate 30×30 cm2 confirmed scalability optimized large reactors. We investigated regime high rf power Prf (0.25–0.7 W/cm2) pressure pdep (1–11 Torr) for μc-Si:H i layer. Furthermore, influence silane concentration temperature studied. A transition amorphous growth could be achieved variation either pressure, plasma power, or concentration. The best were close growth. prerequisite obtaining quality material rate. efficiencies so far are 8.1% 6.6% i-layer rates 5 10 A/s, respectively, single junction cells. Applied a-Si:H/μc-Si:H tandem stabilized efficiency 10.0% achieved.