Total SiH4/H2 pressure effect on microcrystalline silicon thin films growth and structure
作者： E. Katsia , E. Amanatides , D. Mataras , Α. Soto , G.A. Voyiatzis
DOI: 10.1016/J.SOLMAT.2004.07.021
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摘要: Abstract The effect of the total SiH4/H2 gas pressure (1–10 Torr) on growth rate, film crystallinity and nature hydrogen bonding microcrystalline silicon thin films deposited by 13.56 MHz plasma-enhanced chemical vapour deposition (PECVD) was investigated under well-controlled discharge conditions. rate presents an optimum for 2.5 Torr, which does not follow trend silane consumption that increases with is attributed to increase in plasma density. from 1–2.5 Torr then remains almost same, whereas at 1 Torr are highly stressed. On other hand, also drastically affected.
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