High-rate deposition of microcrystalline silicon p-i-n solar cells in the high pressure depletion regime
作者： A. H. M. Smets , T. Matsui , M. Kondo
DOI: 10.1063/1.2961334
关键词:
摘要: Hydrogenated microcrystalline silicon films (μc-Si:H) deposited at high deposition rates (∼2 nm/s) by means of the very-high-frequency (VHF) technique in pressure depletion regime have been integrated into single junction p-i-n solar cells. It is demonstrated that μc-Si:H cells can be optimized using a twofold approach. First bulk properties, under steady-state plasma conditions, are monitoring presence crystalline grain boundaries μc-Si:H. These hydrogenated easily detected via surface hydrides contribution to narrow stretching modes infrared transmission spectroscopy. The suffer from postdeposition oxidation which results reduced red response cell. absence these surfaces an as-deposited matrix reflects device grade material. Second, prevention silane backdiffusion t...
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