Fine-Tuning of Relative Fraction of Amorphous and Crystalline Phases in Hydrogenated Silicon Prepared by PE-CVD Method
作者： A.M. Funde , V.S. Waman , M.M. Kamble , M.R. Pramod , S.P. Gore
DOI: 10.1016/J.EGYPRO.2012.02.027
关键词: Raman spectroscopy 、 Amorphous solid 、 Carbon film 、 Thin film 、 Materials science 、 Silicon 、 Analytical chemistry 、 Deposition (law) 、 Nanocrystalline material 、 Sputter deposition
摘要: Abstract In the present study, nc-Si:H thin films have been deposited from rf-PE-CVD method. A set of depositions was achieved by varying deposition pressure 234 mTorr to 1 Torr, while all other parameters were kept constant. Structural, optical and electrical properties investigated in detail. Deposition is found be a crucial parameter fine-tuning material including relative fraction amorphous crystalline phases. Results indicate that film growth rate critically depends on plasma chemistry/gas phase chemistry governed variation pressure. increased monotonically with increase Structural studied Raman spectroscopy low angle XRD results shows are nanocrystalline over entire range studied. Hydrogen content
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