Preparation and properties of microcrystalline silicon films using photochemical vapor deposition
作者： Tadashi Saitoh , Toshikazu Shimada , Masataka Migitaka , Yasuo Tarui
DOI: 10.1016/0022-3093(83)90271-5
关键词: Chemical engineering 、 Diffraction 、 Mercury (element) 、 Raman scattering 、 Nanocrystalline silicon 、 Materials science 、 Chemical vapor deposition 、 Amorphous solid 、 Microcrystalline 、 Inorganic chemistry 、 Silicon
摘要: Abstract microcrystalline silicon films have been prepared through mercury photosensitized decomposition of monosilane at low gas pressures. The dark and light conductivities the tend to increase reactant pressures lower than 65 Pa become 10 −2 Ω −1 · cm 26 Pa. From Raman scattering x-ray diffraction, were found consist a mixed phase structure including both amorphous regions.
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