作者: Aad Gordijn , Thilo Kilper , Bernd Rech , Sandra Schicho
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摘要: The invention relates to a method for depositing microcrystalline silicon on substrate in plasma chamber system, comprising the following steps: system contains at least one reactive, silicon-containing gas and hydrogen or exclusively before is initiated; mixture continuously fed once has been initiated, concentration of that being set more than 0.5 percent; performance adjusted within range 0.1 2.5 W/cm2 electrode surface, deposition rate exceeding nm/s selected, monocrystalline layer deposited thickness less 1000 nanometers.