Assessing reliability issues in cryogenically-operated SiGe HBTs
作者： Chendong Zhu , C. Grens , Enhai Zhao , A. Ahmed , J.D. Cressler
DOI: 10.1109/BIPOL.2005.1555197
关键词: Reliability (semiconductor) 、 Thermal resistance 、 Operating point 、 Engineering physics 、 Materials science 、 Stress conditions 、 Noise (electronics) 、 Stress (mechanics) 、 Breakdown voltage 、 Electrical engineering 、 Electronic circuit
摘要: We assess SiGe HBTs for emerging mixed-signal cryogenic circuits designed to operate on the Moon without ambient heating or cooling (from +120C as low -230C), focusing of potential reliability issues. Comprehensive mixed-mode stress data these were measured from 300 K 85 K. extract thermal resistance over temperature evaluate impact self-heating at temperatures, explore low-frequency noise performance room and temperatures a function condition, examine breakdown voltage operating point instabilities circuits.
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