Influence of impact-ionization-induced instabilities on the maximum usable output voltage of Si-bipolar transistors
作者： M. Rickelt , H.-M. Rein , E. Rose
DOI: 10.1109/16.915725
关键词:
摘要: The onset of impact-ionization-induced instabilities limits the operating range Si-bipolar transistors, especially in power stages. Therefore, analytical relations which characterize are derived for different driving conditions (mainly V/sub BE/=const. and I/sub E/=const.) arbitrary transistor geometries. They allow designer technologist to calculate maximum usable dc output voltage dependence on dimensions technological parameters. As a consequence, above BV/sub CE0/ can now be more intensively reliably used thus performance potential given technology better exploited. However, reduction tolerable with increasing emitter (or collector) current must carefully considered. presented theory results verified by three-dimensional (3-D) simulations measurements.
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